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71V416S12BEI IC SRAM 4MBIT PARALLEL 48CABGA Renesas Electronics America Inc

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71V416S12BEI IC SRAM 4MBIT PARALLEL 48CABGA Renesas Electronics America Inc

Name: 71V416S12BEI IC SRAM 4MBIT PARALLEL 48CABGA Renesas Electronics America Inc
Brand: Renesas Electronics America Inc
Price: 1 USD

Brand Name : Renesas Electronics America Inc

Model Number : 71V416S12BEI

MOQ : 1

Price : Based on current price

Payment Terms : T/T

Supply Ability : In stock

Delivery Time : 3-5 work days

Packaging Details : anti-static bag & cardboard box

Memory Type : Volatile

Memory Format : SRAM

Technology : SRAM - Asynchronous

Memory Size : 4Mbit

Memory Organization : 256K x 16

Memory Interface : Parallel

Clock Frequency : -

Write Cycle Time - Word, Page : 12ns

Access Time : 12 ns

Voltage - Supply : 3V ~ 3.6V

Operating Temperature : -40°C ~ 85°C (TA)

Mounting Type : Surface Mount

Package / Case : 48-TFBGA

Supplier Device Package : 48-CABGA (9x9)

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Product Details

Description

The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high-speed memory needs.
The IDT71V416 has an output enable pin which operates as fast as 5ns, with address access times as fast as 10ns. All bidirectional inputs and outputs of the IDT71V416 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

Features

◆ 256K x 16 advanced high-speed CMOS Static RAM
◆ JEDEC Center Power / GND pinout for reduced noise.
◆ Equal access and cycle times
– Commercial and Industrial: 10/12/15ns
◆ One Chip Select plus one Output Enable pin
◆ Bidirectional data inputs and outputs directly LVTTL-compatible
◆ Low power consumption via chip deselect
◆ Upper and Lower Byte Enable Pins
◆ Single 3.3V power supply
◆ Available in 44-pin, 400 mil plastic SOJ package and a 44-pin, 400 mil TSOP Type II package and a 48 ball grid array, 9mm x 9mm package.

Specifications

Attribute	Attribute Value
Manufacturer	Integrated Circuit Systems
Product Category	Memory ICs
Series	71V416
Type	Asynchronous
Packaging	Tray Alternate Packaging
Mounting-Style	SMD/SMT
Package-Case	48-TFBGA
Operating-Temperature	-40°C ~ 85°C (TA)
Interface	Parallel
Voltage-Supply	3 V ~ 3.6 V
Supplier-Device-Package	48-CABGA (9x9)
Memory Capacity	4M (256K x 16)
Memory-Type	SRAM - Asynchronous
Speed	12ns
Access-Time	12 ns
Format-Memory	RAM
Maximum Operating Temperature	+ 85 C
Operating temperature range	- 40 C
Interface-Type	Parallel
Organization	256 k x 16
Supply-Current-Max	180 mA
Part-#-Aliases	71V416 IDT71V416S12BEI
Supply-Voltage-Max	3.6 V
Supply-Voltage-Min	3 V
Package-Case	CABGA-48

Functional compatible componentForm,Package,Functional compatible component

Manufacturer Part#	Description	Manufacturer	Compare
IDT71V416S12BEI8 Memory	Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, BGA-48	Integrated Device Technology Inc	71V416S12BEI vs IDT71V416S12BEI8
IDT71V416YS12BEG3 Memory	Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, ROHS COMPLIANT, BGA-48	Integrated Device Technology Inc	71V416S12BEI vs IDT71V416YS12BEG3
IDT71V416S12BEI Memory	Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, BGA-48	Integrated Device Technology Inc	71V416S12BEI vs IDT71V416S12BEI
IDT71V416VS12BEGI Memory	Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, BGA-48	Integrated Device Technology Inc	71V416S12BEI vs IDT71V416VS12BEGI
IDT71V416YS12BEGI Memory	Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, BGA-48	Integrated Device Technology Inc	71V416S12BEI vs IDT71V416YS12BEGI
IDT71V416YFS12BEI Memory	Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, POWER, BGA-48	Integrated Device Technology Inc	71V416S12BEI vs IDT71V416YFS12BEI
71V416VS12BEGI Memory	Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, ROHS COMPLIANT, BGA-48	Integrated Device Technology Inc	71V416S12BEI vs 71V416VS12BEGI
71V416S12BEI8 Memory	CABGA-48, Reel	Integrated Device Technology Inc	71V416S12BEI vs 71V416S12BEI8
IDT71V416S12BEGI Memory	Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, BGA-48	Integrated Device Technology Inc	71V416S12BEI vs IDT71V416S12BEGI
71V416S12BEGI Memory	Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, ROHS COMPLIANT, BGA-48	Integrated Device Technology Inc	71V416S12BEI vs 71V416S12BEGI

Descriptions

SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 12ns 48-CABGA (9x9)

SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM

China 71V416S12BEI IC SRAM 4MBIT PARALLEL 48CABGA Renesas Electronics America Inc wholesale

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